Some of the recommended similar articles:

Method to Predict and Optimize Charge Sensitivity of Ungated AlGaN/GaN HEMT-Based Ion Sensor Without Use of Reference Electrode

IEEE Sensors Journal

AlGaN/GaN HEMT pH Sensor Simulation Model and Its Maximum Transconductance Considerations for Improved Sensitivity

IEEE Sensors Journal

Planar Dual Gate GaN HEMT Cascode Amplifier as a Voltage Readout pH Sensor With High and Tunable Sensitivities

IEEE Electron Device Letters

T-ZnO/AlGaN/GaN HEMT Uric Acid Sensor-Sensitivity Analysis and Effect of Surface Wettability for Improved Performance

IEEE Sensors Journal

Mercury (II) Ion Detection Using AgNWs-MoS2 Nanocomposite on GaN HEMT for IoT-Enabled Smart Water Quality Analysis

IEEE Internet of Things Journal

Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment

IEEE Transactions on Electron Devices

L-Cysteine Functionalized Al0.18Ga0.82N/GaN High Electron Mobility Transistor Sensor for Copper Ion Detection

IEEE Transactions on Electron Devices

Variation of Sensitivity of AlGaN/GaN High Electron Mobility Transistor(HEMT) Based Hydrogen Gas Sensor on Thickness of AlGaN and Mole Fraction of Aluminium

2024 IEEE International Symposium on Smart Electronic Systems (iSES)

MPA-GSH Functionalized AlGaN/GaN High-Electron Mobility Transistor-Based Sensor for Cadmium Ion Detection

IEEE Sensors Journal

Enhanced Stability and Sensitivity of AlGaN/GaN-HEMTs pH Sensor by Reference Device

IEEE Sensors Journal

Home Contact Accessbility Nondiscrimination policy IEEE Ethics Reporting Terms IEEE Privacy Policy More IEEE Sites

A non-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.
Copyright 2023 IEEE – All rights reserved. Use of this website signifies your agreement to the IEEE Terms and Conditions
This site is also available on your smartphone.